home icon > Goods Details Page > IPB072N15N3 G

IPB072N15N3 G Infineon Power MOSFET

IPB072N15N3 G - Infineon - main product image
Part No.:IPB072N15N3 G
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.20
100+ $ 1.01
1000+ $ 0.98
15000+ $ 0.97
30000+ $ 0.96

Technical Specifications

  • Part No.IPB072N15N3 G
  • Series OptiMOS™
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 4V @ 270µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 7.2 mOhm @ 100A, 10V
  • Power Dissipation (Max) 300W (Tc)
  • Supplier Device Package PG-TO263-3-2
  • Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
  • Drain to Source Voltage (Vdss) 150V
  • Input Capacitance (Ciss) (Max) @ Vds 5470pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
📧 📋 💬